Valence Band Offset Of Res2/Bn Heterojunction Measured By X-Ray Photoelectron Spectroscopy

We report the band alignment parameters of ReS2/BN van der Waals heterojunction where the ReS2 and BN monolayer are grown by chemical vapor deposition (CVD). The determination of the band alignment has been carried out by X-ray photoelectron spectroscopy (XPS). With a type-I band alignment, the valence band offset (VBO) and conduction band offset (CEO) values are measured to be 2.79 +/- 0.24 eV and 1.76 +/- 0.24 eV, respectively. The results can offer a reference for the electric and photoelectric devices based on the ReS2/EN heterojunction. In addition, the large VEO and CEO of this heterojunction make it a good choice for substrates and gate dielectrics of complementary metal oxide semiconductor (CMOS) transistors. (C) 2021 Elsevier B.V. All rights reserved.