Experimental determination of the valence band offsets of ZnGeN2 and (ZnGe)0.94Ga0.12N2 with GaN
arxiv(2021)
摘要
A predicted type-II staggered band alignment with an approximately 1.4 eV valence band offset at the ZnGeN2/GaN heterointerface has inspired novel band-engineered III-N/ZnGeN2 heterostructure-based device designs for applications in high performance optoelectronics. We report on the determination of the valence band offset between metalorganic chemical vapor deposition grown (ZnGe)(1-x)Ga2xN2, for x = 0 and 0.06, and GaN using x-ray photoemission spectroscopy. The valence band of ZnGeN2 was found to lie 1.45-1.65 eV above that of GaN. This result agrees well with the value predicted by first-principles density functional theory calculations using the local density approximation for the potential profile and quasiparticle self-consistent GW calculations of the band edge states relative to the potential. For (ZnGe)(0.94)Ga0.12N2 the value was determined to be 1.29 eV, similar to 10%-20% lower than that of ZnGeN2. The experimental determination of the large band offset between ZnGeN2 and GaN provides promising alternative solutions to address challenges faced with pure III-nitride-based structures and devices.
更多查看译文
关键词
ZnGeN2, ZnGeGa2N4, II-IV-N-2, band offset, MOCVD
AI 理解论文
溯源树
样例
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要