Enabling Lower-Power Charge-Domain Nonvolatile In-Memory Computing with Ferroelectric FETs

Compute-in-memory (CiM) is a promising approach to alleviating the memory wall problem for domain-specific applications. Compared to current-domain CiM solutions, charge-domain CiM shows the opportunity for higher energy efficiency and resistance to device variations. However, the area occupation and standby leakage power of existing SRAM-based charge-domain CiM (CD-CiM) are high. This brief propo...