Memory repair logic sharing techniques and their impact on yield

2020 IEEE International Test Conference (ITC)(2020)

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摘要
Techniques for sharing memory repair logic amongst memories are described. The techniques allows reducing silicon area and loading time of repair information upon power up. The impact on yield is predicted using two different methods based on defect density and clustering or past silicon experience.
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关键词
Memory repair,silicon area,repair time,yield
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