Atomic Layer Deposited Films Of Al2o3 On Fluorine-Doped Tin Oxide Electrodes: Stability And Barrier Properties

BEILSTEIN JOURNAL OF NANOTECHNOLOGY(2021)

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摘要
Al2O3 layers were deposited onto electrodes by atomic layer deposition. Solubility and electron-transport blocking were tested. Films deposited onto fluorine-doped tin oxide (FTO, F:SnO2 /glass) substrates blocked electron transfer to redox couples (ferricyanide/ferrocyanide) in aqueous media. However, these films were rapidly dissolved in 1 M NaOH (approximate to 100 nm/h). The dissolution was slower in 1 M H2SO4 (1 nm/h) but after 24 h the blocking behaviour was entirely lost. The optimal stability was reached at pH 7.2 where no changes were found up to 24 h and even after 168 h of exposure the changes in the blocking behaviour were still minimal. This behaviour was also observed for protection against direct reduction of FTO.
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关键词
Al2O3, atomic layer deposition (ALD), barrier properties, corrosion, electrochemistry, FTO
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