Influence Of Dopant Uniformity On Electron Transportin Cuxbi2se3 Films

The contribution of topological insulator surface states" their transport properties can be tuned by doping, but the uniformity effect of the dopants has been ignored in previous studies. In this work, we studied the influence of the degree of uniformity on high-quality Cu, Bi2Se3 films prepared by pulsed laser deposition with a designed sequential deposition process of Bi2Se3 and Cu. It was found that with a greater uniformity of the Cu dopants a two-dimensional electron electron interaction (2D EEI) effect becomes more evident below 25 similar to K in the presence of weak disorder and a weak antilocalization (WAL) effect near zero magnetic field becomes more pronounced at low temperature. Furthermore, the topological surface state conduction of the Cu Bi2Se3 films Nagaoka (HLN) model analysis of the WAL effect. This research may open up new aspect properties of disordered topological insulators.[Graphics]