From 5G to 6G: will compound semiconductors make the difference?

N. Collaert,A. Alian,A. Banerjee,V. Chauhan,R. Y. ElKashlan,B. Hsu, M. Ingels,A. Khaled, K. Vondkar Kodandarama, B. Kunert,Y. Mols,U. Peralagu,V. Putcha,R. Rodriguez,A. Sibaja-Hernandez, E. Simoen,A. Vais,A. Walke,L. Witters,S. Yadav,H. Yu,M. Zhao,P. Wambacq,B. Parvais,N. Waldron

international conference on solid state and integrated circuits technology（2020）

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摘要

In this work, we will address the opportunities of a hybrid III-V/CMOS technology for next generation wireless communication, beyond 5G, moving to operating frequencies above 100GHz. Challenges related to III-V upscaling and CMOS co-integration using 3D technologies will be discussed.

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关键词

3D technologies,CMOS co-integration,hybrid III-V/CMOS technology,operating frequencies,next generation wireless communication,semiconductors,frequency 100.0 GHz

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