Role of Gd dopants on electrical properties of RF co-sputtered HfO2 thin films for resistive switching applications

•Hf1-xGdxO2 thin films are deposited on Si by co-sputtering of Hf and Gd target.•Gd content is found to be increased up to 9 % with for RF power of 60 W.•The cubic phase transition has been observed for higher Gd doping concentration.•The higher k-value with reduced interface charge density is observed at 60 W.•The bipolar switching behavior of 9% Gd doped HfO2 films suits well for memristors.