Study on Gate Leakage and Trapping Effect in InAIN/GaN HEMTs

Xingye Zhou,Yuanjie Lv,Xin Tan,Hongyu Guo,Yanmin Guo,Zhihong Feng,Shujun Cai

2020 IEEE 15th International Conference on Solid-State &amp Integrated Circuit Technology (ICSICT)（2020）

Cited 0|Views6

Key words

pulsed current-voltage measurement,capacitance measurement,frequency-dependent conductance method,ideality factor,trap density,current hysteresis,current collapse,gate-leakage injection mechanism,gate leakage,deep-level trapping effect,multiple characterization methods,DC measurement,thin-barrier InAlN/GaN high-electron-mobility transistors,Schottky gate barrier height,InAlN-GaN

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