Shunt resistance spatial variations in amorphous silicon solar cells

This article describes the spatial variations of the shunt resistance in a-Si:H, PV cells across the absorber layer (i-layer). When the a-Si:H PV cell is illuminated through its front layer, photo generated carriers distribute along the i-layer as a function of the radiation WL and the voltage drop across the PV cell. The generated electric currents of the electrons and holes are simultaneously determined by solving the equations of the transport, Poisson, and the continuity as a role of the voltage and the place near the i-layer. In this work, leakage flow of electrons and holes is calculated through the i-layer to calculate the corresponding two J/V curves of the two carrier types. Therefore, the shunt resistance associated to each carrier type varies is calculated separately and will be variable overall the i-layer. This research bring out with the calculation of area dependent shunt resistance extracted from the location-dependent J/V curves of the carriers is comparable to the conventional single valued shunt resistance found from the global J/V curve of the PV cell. This proposed work is a novel idea, which clearly indicates the simple technique to calculate shunt resistance spatial variations of a-Si:H PV cell. This article also presents the impact of the CM values on the calculated shunt resistance of the PV cells.