A High Linearity Readout Integrated Circuit for Uncooled IR Detector
china semiconductor technology international conference(2020)
摘要
In this paper, we presented a CMOS microbolometer design integrated with a linearity readout circuit using 0.18µm CMOS process. The air-bridge microbolometer was designed with polycrystalline silicon film while a capacitive trans-impedance amplifier (CTIA) was used for detecting the weak current from IR sensors. Simulation results shows that the noise equivalent power of detector is about 1nW and the static power consumption is 163µW for CTIA with a small area of 30x40 µm
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关键词
high linearity readout integrated circuit,uncooled IR detector,CMOS microbolometer design,linearity readout circuit,air-bridge microbolometer,polycrystalline silicon film,capacitive trans-impedance amplifier,CTIA,IR sensors,size 0.18 mum,power 1.0 nW,power 163.0 muW,Si
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