A High Linearity Readout Integrated Circuit for Uncooled IR Detector

china semiconductor technology international conference(2020)

引用 0|浏览4
暂无评分
摘要
In this paper, we presented a CMOS microbolometer design integrated with a linearity readout circuit using 0.18µm CMOS process. The air-bridge microbolometer was designed with polycrystalline silicon film while a capacitive trans-impedance amplifier (CTIA) was used for detecting the weak current from IR sensors. Simulation results shows that the noise equivalent power of detector is about 1nW and the static power consumption is 163µW for CTIA with a small area of 30x40 µm 2 .
更多
查看译文
关键词
high linearity readout integrated circuit,uncooled IR detector,CMOS microbolometer design,linearity readout circuit,air-bridge microbolometer,polycrystalline silicon film,capacitive trans-impedance amplifier,CTIA,IR sensors,size 0.18 mum,power 1.0 nW,power 163.0 muW,Si
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要