Preparing Cu2ZnSnSe4 thin film solar cells based on selenium containing precursors

Selenium containing precursors were prepared by magnetron sputtering SnSe, ZnSe and Cu targets. Effects of different annealing temperature on performances of Cu2ZnSnSe4(CZTSe) thin film and solar cells were investigated. CZTSe absorber layers based on selenium containing precursors were obtained using different selenization temperatures. The crystal structure, phase purity, surface and cross section morphologies and the element compositions of CZTSe thin films were characterized by XRD, Raman, SEM and EDS, respectively. It was found that the crystallization quality of the thin film gradually improved with increasing temperature, and CZTSe thin films annealed at 530°Chad the best crystallization quality. The results showed that the surfaces were flat and dense without obvious secondary phase. Complete CZTSe thin films solar cells were prepared by common structure. The electrical properties of solar cells were tested by Hall, EQE and J-V. The results showed that the maximum mobility was 4.33 cm2V-1S−1, and the maximum power conversion efficiency was 3.65%, with an open circuit voltage of 346 mV, a short circuit current density of 31.36 mA/cm2 and a fill factor of 33.57%.