Correction to: High mobility monolayer MoS2 transistors and its charge transport behaviour under E-beam irradiation

Journal of Materials Science(2020)

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摘要
According to the DFT calculations in a previous report (Ref. [27]: Nat. Commun. 2013, 4(1): 2642), the localization length ξ, which was consistent with the distribution of electron wave function, is equal to 6 Å. Consequently, the ξ value is corrected from 10 Å to 6 Å, and Figure 4c with the corrected value is modified as follows.
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