Cmos Compatible Process Integration Of Sot-Mram With Heavy-Metal Bi-Layer Bottom Electrode And 10ns Field-Free Sot Switching With Stt Assist
2020 IEEE SYMPOSIUM ON VLSI TECHNOLOGY(2020)
摘要
This paper demonstrates a CMOS compatible process integration of spin-orbit torque (SOT) device with a unique bilayer SOT bottom electrode. An effective spin-Hall angle of 0.27, a median tunneling magneto-resistance ratio of 127% at electrical CD of 57 nm, and a 96% resistance-based MTJ yield on 300 mm scale were achieved. We experimentally validated the two-pulse field-free SOT switching scheme with spintransfer torque assist at 10 ns. Unlike conventional field-free SOT switching schemes, the demonstrated scheme adds no complexity to process integration.
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关键词
unique bilayer SOT bottom electrode,effective spin-Hall,median tunneling magneto-resistance ratio,two-pulse field-free SOT switching scheme,spin-transfer torque,CMOS compatible process integration,SOT-MRAM,STT assist,heavy-metal bi-layer bottom electrode,conventional field-free SOT switching
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