Nanosecond Laser Anneal (Nla) For Si-Implanted Hfo2 Ferroelectric Memories Integrated In Back-End Of Line (Beol)

10nm Si-implanted HfO2 is demonstrated to be ferroelectric for the first time when integrated in a Back-End-Of-Line (BEOL) 130nm CMOS. Scaled 0.28 mu m(2) capacitors demonstrate excellent endurance (10(9) cycles measured at 4V, extrapolated to be 10(12) at 3V), with tight coercive field distributions at wafer scale and excellent data retention at 85 degrees C. To extend the ferroelectric BEOL compatibility of 10nm or thinner HfO2-based films, but also to understand their crystallization dynamics, nanosecond laser anneal is demonstrated to be very appealing, even for undoped HfO2.