From Insulator To Oxide-Ion Conductor By A Synergistic Effect From Defect Chemistry And Microstructure: Acceptor-Doped Bi-Excess Sodium Bismuth Titanate Na0.5bi0.51tio3.015

The influence of Ti-site acceptor-doping (Mg2+, Zn2+, Sc3+, Ga3+ and Al3+) on the electrical conductivity and conduction mechanism of a nominally Bi-excess sodium bismuth titanate perovskite, Na0.5Bi0.51TiO3.015 (NB0.51T), is reported. Low levels of acceptor-type dopants can introduce appreciable levels of oxide-ion conductivity into NB0.51T, i.e., 0.5% Mg-doping for Ti4+ can enhance the bulk conductivity of NB0.51T by more than 3 orders of magnitude with the oxide-ion transport number going from 0.9 at 600 degrees C. The intriguing electrical behaviour in acceptor-doped NB0.51T dielectrics is a synergistic effect based on the defect chemistry and ceramic microstructure in these materials. NB0.51T ceramics with extremely low levels of doping show an inhomogeneous microstructure with randomly distributed large grains embedded in a small grained matrix. This can be considered as a two-phase composite with large grains as a conductive phase and small grains as an insulating phase based on an empirical conductivity - grain size relationship. Variation in the fraction of the conductive, large grained phase with increasing doping levels agrees with the oxide-ion transport number. This electrical two-phase model is supported by finite element modelling. This study reveals the significance of ceramic microstructure on the electrical conduction behaviour of these materials and can provide a guideline for selecting suitable doping strategies to meet the electrical property requirements of NBT-based ceramics for different applications.