Magnetoresistance Of Epitaxial Gdn Films

We report magnetoresistance measurements on epitaxial films of the intrinsic ferromagnetic semiconductor GdN electron doped withsimilar to10 20cm- 3 tosimilar to10 21cm- 3. The magnetoresistance across the temperature range of 10-300K is dominated by a reduction of spin-disorder scattering in the presence of a magnetic field, imposing a resistance reduction of 27% in a field of 8T. We show that the magnetoresistance closely follows the magnetic disorder as signaled by the departure of the magnetization from its fully saturated valueMs of7mu B /Gd3 +.