Rescuing RRAM-Based Computing From Static and Dynamic Faults

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems(2021)

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摘要
Emerging resistive random access memory (RRAM) has shown the great potential of in-memory processing capability, and thus attracts considerable research interests in accelerating memory-intensive applications, such as neural networks (NNs). However, the accuracy of RRAM-based NN computing can degrade significantly, due to the intrinsic statistical variations of the resistance of RRAM cells. In thi...
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关键词
Resistance,Kernel,Fault tolerant systems,Fault tolerance,Reliability,Quantization (signal),Electrodes
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