Investigation of the Effect of Doping on Transition Layers of Anisotype GaInAsP and InP Heterostructures Obtained by the Method of MOCVD

When studying doped anisotypic heterostructures with Ga 1 – x In x As y P 1 – y layers grown on InP substrates with an InP buffer layer by metal organic chemical vapor deposition, the presence of transition regions is revealed in the Ga 1 – x In x As y P 1 – y layer from the side of the substrate in some of the samples, along which the arsenic content ( y ) increases from the interface with the InP layer to the surface of the structure by a Δ y value of up to 0.15, while the content of elements of the third group ( x ) remains constant.