Nanoscale FET: How To Make Atomistic Simulation Versatile, Predictive, and Fast at 5nm Node and Below

Philippe Blaise, Udita Kapoor,Mark Townsend, Eric Guichard,James Charles,Daniel Lemus,Tillmann Kubis

2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)（2020）

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摘要

Ultra-scaled FET technology requires simulations at the atomic scale. We present the Victory Atomistic tool inherited from Nemo5. Thanks to a combination of non-equilibrium Green's functions and state-of-the-art band structure calculations, versatile, predictive, and fast simulations become accessible within the self-consistent Born approximation, optimized by a generalized low-rank projection.

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关键词

Atomistic,Simulation,CMOS,FET,NEGF,Scattering,Tight-Binding

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