High-sigma analysis of DRAM write and retention performance: a TCAD-to-SPICE approach

Salvatore Maria Amoroso,Jaehyun Lee,Andrew R. Brown,Plamen Asenov,Xi-Wei Lin,Victor Moroz,Thomas Yang

2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)（2020）

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摘要

This paper presents a TCAD-to-SPICE high-sigma analysis of DRAM write and retention performance. Both statistical and process-induced variability are taken into- account. We highlight that the interplay between discrete traps and discrete dopants is ruling the leakage statistical tails and therefore can play a fundamental role in determining yield and reliability of ultra-scaled DRAMs.

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关键词

DRAM,leakage,retention time,DTCO,TCAD

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