Exploiting Error Characteristic to Optimize Read Voltage for 3-D NAND Flash Memory
IEEE Transactions on Electron Devices（2020）
关键词
Threshold voltage,Flash memories,Logic gates,Field programmable gate arrays,Interference,Bit error rate,3-D triple-level cell (TLC) NAND flash,E cycles,raw bit error rate (RBER),read reference voltage (RRV),retention periods
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