Enhanced Photoresponsivity Of Inse Photodetector By Molecular Doping

InSe has attracted significant attention because of its extraordinary properties. However, the responsivities of the devices are mainly focused in the visible range. Here, we report an InSe/hexagonal boron nitride (h-BN)-based photodetector with high responsivity and a photoresponse from a 940 to 447 nm wide response range, which is mainly due to two main techniques: (i) h-BN insertion underneath the InSe channel, and (ii) tetrafluorotetracyanoquinodimethane p-doping treatment. The method described here presents a significant step toward the achievement of next-generation high-performance photodetectors based on two-dimensional nanomaterials.