Optical gain sensitivity of BGaAs/GaP quantum wells to admixtures of group III and V atoms

21st-century studies in the field of epitaxy brought observable progress in a field of heterogeneous integration of III-V materials onto silicon photonic systems. BGaAs/GaP quantum wells (QWs) are a new material system, which can be grown on GaP/Si templates and thereby can be integrated with a Si platform. This work presents calculations of the material optical gain spectra for the QWs modified by an incorporation of group III and V elements, in both the QWs region and its barriers. The gain spectra are calculated based on the 8-band k . p model and Fermi's Golden Rule. Incorporations of indium and phosphorus are analyzed for the thin film of the QWs, and boron, aluminum, indium, and arsenic for its barriers. Since an energy of gain peak in the BGaAs/GaP QWs can be tuned within a range of 690-730 nm and the positive optical gain is presented for the QWs with these modifications, this system is promising for further development of red-light lasers integrated with Si. (C) 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement