Electrical And Optical Modeling Of Gap-Free Iii-Nitride Micro-Led Arrays

Ion implantation-fabrication of gap-free III-nitride micro-light emitting diode (mu LED) arrays has been analyzed along with its impacts on micro-LED electrical and optical characteristics. The implanted ions were designed to block the current between the adjacent pixels in the micro-LED array for gap-free isolation. Electrical simulation suggests that the crosstalk current among the pixels depends on three key parameters, i.e., ion energy, ion dose, and the width of the isolation barrier. The ion implantation parameters used in the simulation were chosen from previous published reports to provide some insights of the follow up experimental study of this work. The electrical crosstalk can be reduced by the increase in the impurity concentration in the isolation barriers, which introduces more deep level traps that impede the lateral current low between the pixels in the array. The optical simulation results show that the gap-free configuration of the pixelated micro-LEDs also suppresses the light crosstalk caused by the wave-guide effect substantially. Studying the electrical and optical crosstalk performance of gap-free micro-LED arrays could pave the way for developing LED-based microdisplay panels with ultra-small pitch dimensions and low crosstalk noises, both of which are essential for high display resolutions.