Slow degradation of a multiemitter 638-nm high-power broad-area laser diode during long-term aging

OPTICAL ENGINEERING(2020)

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摘要
Laser-based displays have attracted much attention because they are the only displays that can express the full color gamut of Ultra-High Definition Television (U-HDTV), International Telecommunication Union Radio Communication Sector Broadcasting Service (ITU-R BT).2020. We have developed 638-nm broad-area laser diode (LD) with 75-mu m-wide dual emitters and achieved wall plug efficiency of over 40.5% at 25 degrees C. But slow degradation is still a factor limiting the lifetime due to the requirement for a high temperature and high-power operation. We performed the long-term aging test of 638-nm LDs under the different conditions, including a high-power operation such as 1.3 to 2.5 W, and investigated the behavior of output power characteristics, especially the dependence of its output characteristics on temperature. After long-term aging, the threshold current of the LD increased and its slope efficiency (SE) decreased. The measured dependence of the output characteristics of the LD on temperature was converted into that on the junction temperature using the thermal resistance between the junction and package. The latter dependence showed an increase of threshold current and no change of SE. This result indicates that the slow degradation of the red broad-area LD was caused by the increase of the nonradiative recombination rate in the active layer during aging. (C) 2020 Society of Photo-Optical Instrumentation Engineers (SPIE)
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关键词
AlInGaP,laser diode,broad area,high-power,laser display,slow degradation
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