Performance Enhancement Of P-Type Sno Semiconductors Via Siox Passivation

In this paper, the effects of sputter-deposited silicon oxide (SiOx) passivation on p-type tin monoxide (SnO) semiconductor are investigated. X-ray photoelectron spectroscopy analyses indicate that the relative oxygen content decreases when a SiOx passivation layer is applied, thus inducing an oxygen deficient stoichiometry which promotes the delocalization of the valence band, thus improving hole transport. As a result, SnO thin-film transistors (TFTs) with a SiOx protective layer exhibit much higher field-effect mobility of 1.40 cm(2)/Vs compared to devices without passivation (6.23 x 10(-2) cm(2)/Vs).