Features of MIS Structures Based on Insulating PbSnTe:In Films with the Composition in the Vicinity of the Band Inversion Related to Their Ferroelectric Properties

A. E. Klimov,A. N. Akimov,I. O. Akhundov, V. A. Golyashov,D. V. Gorshkov,D. V. Ishchenko, E. V. Matyushenko,I. G. Neizvestny,G. Yu. Sidorov,S. P. Suprun,A. S. Tarasov,O. E. Tereshchenko, V.S. Epov

SEMICONDUCTORS（2020）

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摘要

The characteristics of metal-insulator-semiconductor (MIS) structures based on insulating PbSnTe:In films with compositions in the vicinity of band inversion grown by molecular-beam epitaxy (MBE) are studied. It is shown that a number of features of the films can be due to a ferroelectric phase transition with a Curie temperature in the range of about T ≈ 15–20 K.

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关键词

PbSnTe:In solid solution, field effect, MIS structure, ferroelectric phase transition

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