The preparation of Cu 2 ZnSnS 4 thin film solar cell based on oxygen containing precursor

In this paper, we reported a new method to fabricate Cu 2 ZnSnS 4 (CZTS) thin film solar cells. Oxygen containing precursor thin films were deposited on the Mo-coated soda lime glass (SLG) by sputtering ZnO, SnO 2 and Cu targets. For getting higher quality CZTS thin films, the effects of different annealing temperatures of 380 °C, 480 °C, 580 °C and 650 °C on CZTS films were systematically investigated. The results showed that the optimum annealing temperature was 580 °C. Through optimizing the sulfurization process, phase-pure CZTS thin films with compact and large grains were obtained. Composition analysis showed that O was not detected after sulfurizing process which indicated all of O was replaced by S. And due to the stability of SnO 2 , the loss of tin can be avoided. In addition, ZnO not only can provide zinc sources, but also can decrease the thickness of MoS 2 as a barrier layer. Finally, CZTS solar cells based on sputtering oxides targets were obtained and the preliminary fabricated CZTS thin film solar cells had an efficiency of 5.08%, with an open-circuit voltage of 645 mV, a short-circuit current density of 21.74 mA/cm 2 and a fill factor of 36.23%.