Influence of Substrate Resistivity on Porous Silicon Small-Signal RF Properties

Geoffroy Godet,Emmanuel Augendre,Jose Lugo-Alvarez,Helene Jacquinot,Frederic X. Gaillard, Thomas Lorne,Emmanuel Rolland,Thierry Taris,Florence Servant

IEEE Transactions on Electron Devices（2020）

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摘要

This article provides guidelines to design porous silicon (PS) layers regarding optimization of smallsignal properties in passive structures for radio frequency (RF): insertion loss and crosstalk. Results are based on high-frequency measurements on 200-mm wafers and electromagnetic simulations up to 40 GHz. Using substrate resistivity below 1 Ω cm allows the best tradeoff with minimized PS thickness.

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关键词

Crosstalk,linear attenuation coefficient,porous silicon (PS),S-parameters,substrate resistivity

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