Modulation Of Qcse In Ingan-Based Leds With Truncated-Hexagonal-Pyramid Patterned-Sapphire Substrates

2020 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)(2020)

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摘要
A method for the modulation of QCSE inside multiple-quantum wells of InGaN-based LEDs is proposed and confirmed with photoluminescence, Raman spectra, and electroluminescence using an integrating sphere. (C) 2020 The Author(s)
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关键词
patterned-sapphire substrates,multiple-quantum wells,InGaN-based LEDs,photoluminescence,Raman spectra,electroluminescence,quantum confined Stark effect,InGaN,Al2O3
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