A Compile-time Framework for Tolerating Read Disturbance in STT-RAM

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems（2021）

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摘要

Spin-transfer torque magnetic random access memory (STT-RAM) is one of the most promising candidates for next-generation on-chip memories. While STT-RAM offers high density, negligible leakage power, and fast access speed, it also suffers from read-disturbance errors, that is, read operations might accidentally change the value of the accessed memory location. Although these error...

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关键词

Random access memory,Magnetic tunneling,Error analysis,Error correction codes,Registers,Optimization,Reliability

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