High-Speed Low-Voltage Waveguide-Integrated Ge-On-Si Avalanche Photodiodes

2020 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)(2020)

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摘要
We demonstrate waveguide-integrated silicon-germanium avalanche photodiodes. With a unity-gain responsivity of 0.95 A/W, gain of 16 and bandwidth of 33 GHz are achieved. 32 G-baud PAM-4 eyes are demonstrated without digital signal processing. (c) 2020 The Author(s)
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关键词
unity-gain responsivity,high-speed low-voltage waveguide-integrated silicon-germanium avalanche photodiodes,PAM-4 eyes,frequency 33.0 GHz,Ge-Si
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