High-Voltage Fast Recovery Avalanche Diodes on Silicon Carbide
JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS(2020)
摘要
This paper describes the laboratory samples of high-voltage (1560 V) fast recovery (20 ns) avalanche diodes based on silicon carbide (SiC). It is shown that the fabricated diodes are capable of dissipating energy up to 2.9 J/cm 2 in the mode of single avalanche current pulses (1-μs pulse duration). The numerical computation of the unsteady heat process shows that self-heating by an avalanche pulse causes the local temperature in the base of the diodes to reach at least 1100 K.
更多查看译文
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要