First Principle Analysis of Os-passivated Armchair Graphene Nanoribbons for Nanoscale Interconnects

In this paper, transport properties of Osmium (Os)-passivated armchair graphene nanoribbons (AGNRs) have been explored for applications in nanoscale interconnects. Os has been used for passivation in place of Hydrogen (H). In general, H-passivation is used to reduce the edge scattering in AGNRs. However, this increases the bandgap of the structure. In our study, it is found that Os-passivation reduces the edge scattering with improvement in metallicity of AGNRs, which makes it suitable for future nanoscale interconnects. We have extracted key parameters, such as transmission spectrum, I-V characteristics, number of conduction channels, Fermi velocity, kinetic inductance and quantum capacitance. We have compared our results with Fe-passivated AGNRs. In case of Os-passivated AGNRs, up to eight conduction channels are seen that result in higher currents of up to 4x as compared to Fe-passivated AGNRs.