Study On Self-Parallel Gan-Based Terahertz Hetero-Structural Gunn Diode

In this paper, we propose a novel gallium nitride-based multi-two-dimensional-electron-gas (2DEG)-channel self-parallel Gunn diode (SPD) for the first time. In the SPD, a trench anode is etched through at least the bottommost 2DEG channels, which splits all 2DEG channels into two shorter channels with lengths of L(1)and L-2. Therefore, one SPD is just equal to several shorter diodes in parallel; as a result, we call it a self-parallel Gunn diode. In the symmetrical SPD, the component of fundamental frequency is nearly multiplied as compared with the regular Gunn diode. In the asymmetrical SPD (L-2=nL(1),nis a positive integer), the harmonic components are greatly enhanced, specially the n(th)harmonic. Our work demonstrates that the GaN-based terahertz SPD not only offers an easy transfer between two different frequencies, but also realizes the simultaneous enhancement of oscillation power and frequency.