High-brightness 808 nm semiconductor laser diode packaged by SiC heat sink

In order to further improve the reliability of high-power output of high-brightness semiconductor lasers, 808 nm semiconductor laser chips with a stripe width of 100 mu m were packaged by SiC and AlN heat sinks, and the thermal performance of the composed SiC and AlN devices were investigated. First, the finite element method (FEM) is adopted to simulation and calculation, and then the thermal resistance of the device is measured by wavelength drift method experimentally. Both results show that the thermal resistance of the laser packaged by SiC heat sink is lower and the experimentally measured value is 2.95 K center dot W-1. In addition, the test results also indicate that the laser packaged by SiC heat sink has higher output power and higher wall-plug efficiency. The output power attains 10.3 W at the injection current of 10 A. and the maximum wall-plug efficiency can reach 53.5% at 25 degrees C.