Comparison of switching behaviour and losses of high-power Si and SiC power module

With regard to performance, availability and cost Silicon-Carbide (SiC) power modules become more and more competitive - Silicon-based power modules remain relevant. This paper analyses two example power modules with comparable rating in an identical environment. Measurement is carried out with great care, because especially the very fast transients and subsequent ringing of SiC switching poses high challenges. Adequate frequency response of probes and accurate delay compensation of acquired signals is needed. Guidance for performing measurements and a basis for selecting suitable components for a given application are given.