Design of microstrip ultrafast pulses interconnect for THz-analog and digital applications

In this article, the propagation characteristic of transient pulses over the designed microstrip THz interconnects by various conducting materials is analyzed. The Fourier inverse transformation approach is used to visualize the effect of propagation of transient pulses over THz interconnects made by the various conducting materials which are widely used in Complementary Metal Oxide Semiconductor (CMOS) technology named Copper, Gold, Aluminum, Tungsten, Tungsten-Silicide (W-Si 2 ) and Poly-Si respectively. All parameters of transient pulse like rising time, fall time, propagation delay, settling time, overshoot, undershoot and ringing, etc. have calculated using the proposed circuit model and it has been verified with Finite Elements Method based EM-Simulation results. The distortion due to geometrical dispersion is significant; while a loss could be an important factor depending on the dielectric loss of the substrate. This information could be useful in designing both on board and on-chip interconnects. The proposed circuit model of microstrip THz interconnects and algorithmic frameworks proved the usefulness of rapid design, which is extremely challenging when using conventional methods. To the awareness, this is the attempt to efficient solving of this type of design problems; especially in the context of explicit THz interconnect design for CMOS technology.