Factors and Considerations for Modeling Loss of a GaN-based Inverter
IEEE Transactions on Power Electronics（2020）
关键词
Gallium nitride,Inverters,Switching loss,Junctions,Load modeling,Switches,Heat sinks,Finite-element analysis (FEA) simulation,gallium nitrite (GaN),high-electron-mobility transistor ,(HEMT),inverter,loss model,parasitics
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