Corona Assisted Tuning of Gallium Oxide Growth on 3C-SiC(111)/Si(111) Pseudosubstrates

Gallium oxide was grown on silicon carbide substrates using a corona discharge assisted vapor phase epitaxy process and gold catalyst. It is shown that by implementing the corona discharge the morphology of the gallium oxide can be transformed. The excitation of the gas phase and the generation of excited species directly influence the growth morphology suppressing nanowire growth and supporting the transformation into heteroepitaxial growth.