Scattering In Inas/Gasb Coupled Quantum Wells As A Probe Of Higher Order Subband Hybridization

We have performed a detailed investigation into the intersubband scattering within InAs/GaSb coupled quantum wells in the electron dominated regime. By considering the carrier mobilities and the quantum lifetime as a function of carrier density, we find that the occupation of higher order electronlike subbands are inhibited by anticrossing with the hole subbands. We also find that, by applying a gate bias to the GaSb layer, we are able to move the electron-hole anticrossing point in energy, modulating the electronlike states that should be localized within the InAs layer.