Diode parameters and ultraviolet light detection characteristics of n-type silicon/p-type nanocrystalline diamond heterojunctions at different temperatures

•n-Si/p-nanocrystalline diamond junctions built by coaxial arc plasma deposition.•Ideality factor (n) rose and barrier height reduced as decrease in temperature.•Series resistance rose due to high n and low carrier mobility at low temperatures.•Photocurrent at 150 K over two orders of magnitude above dark current at 0 V.•Detectivity at 150 K higher than that of 300 K about one order of magnitude at 0 V.