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High Vth Enhancement Mode GaN Power Devices with High I-D,I-max Using Hybrid Ferroelectric Charge Trap Gate Stack

C. H. Wu,S. C. Liu,C. K. Huang,Y. C. Chiu,P. C. Han,P. C. Chang, F. Lumbantoruan,C. A. Lin,Y. K. Lin,C. Y. Chang,Chenming Hu,Hiroshi Iwai,Edward Yi Chang

Symposium on VLSI Technology-Digest of Technical Papers（2017）

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