Extending 193nm immersion with hybrid optical maskless lithography

Immersion-based optical lithography techniques at 193nm have made great progress and are viewed by many as an option for the, 45nm node. But options for the 32nm node are uncertain. EUV is one possiblility. However, critical technological issues regarding. light sources, masks, resists, and other must first be solved. The only other viable option appears to be enhancing 193nm immersion by multiple exposures. The key question for this option is what type of multiple, exposure solution is most economical and practical to implement. This article discusses a specific type of multiple exposure optical approach we refer to as hybrid optical maskless lithography (HOMA).