Two-Terminal Direct Wafer-Bonded GaInP/AlGaAs//Si Triple-Junction Solar Cell with AM1.5g Efficiency of 34.1%

SOLAR RRL(2020)

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摘要
The terrestrial photovoltaic market is dominated by single-junction silicon solar cell technology. However, there is a fundamental efficiency limit at 29.4%. This is overcome by multijunction devices. Recently, a GaInP/GaAs//Si wafer-bonded triple-junction two-terminal device is presented with a 33.3% (AM1.5g) efficiency. Herein, it is analyzed how this device is improved to reach a conversion efficiency of 34.1%. By improving the current matching, an efficiency of 35% (two terminals, AM1.5g) is expected.
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关键词
direct wafer bonding,III-V on Si,metalorganic vapor phase epitaxy,multijunction solar cells
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