Recent progress in 1.3-and 1.5-mu m waveband wafer-fused VCSELs

The progress of 1.3- and 1.5-mu m waveband wafer-fused VCSELs is reported. The emission of single mode power of 6 - 8 mW at room temperature and up to 3 mW at 80 degrees C were demonstrated. 10-Gb/s full wavelength-set VCSEL devices for CWDM systems with high yield and Telcordia-reliability were industrially manufactured. By increasing the compressive strain in the QWs and reducing the cavity photon life time the modulation bandwidth was increased to 11.5 GHz, and large-signal data transmission experiments show error-free operation and open eye diagrams from 25 to 35 Gb/s in both B2B and after 10-km, respectively.