High power 685nm laser diode array with 300W output power and 40% conversion efficiency

High power AlGaInP laser diodes (LDs) and bars emitting at about 685 nm have been fabricated. The epitaxial structures, including the AlInP cladding layer, asymmetric waveguide and single compressive-strained quantum well, were designed to optimize the thermal performance. The transparent window structure formed by Zn diffusion was employed to increase the output power of AlGaInP LDs. A maximum power of 4.9 W was realized for the single emitter LDs without catastrophic optical damage. Using micro-channel heat sinks, an array stacked with six 1-cm bars showed an output power of more than 300 W with 40% conversion efficiency.