Fixed-Oxide-Charge Characterization by Photoreflectance Spectroscopy in HfO(2) on Ge treated by Fluorine

The interface traps in HfO(2)/Ge is reduced by fluorine treatment, and photoreflectance spectroscopy (PRS) which has some merits Such as nondestructive and contactless, is applied for characterization of fixed charges distribution to HfO(2)/Ge gate stack as a new type of measurement method. C-V characteristics show that the sample treated with fluorine before deposition by photo-assisted MOCVD has small hysteresis, and interface states are improved. PRS signal of HfO(2)/Ge gate stack call be detected, and these measurements show that fixed charges are mainly distributed at interface and reduced by fluorine treatment.