A Proposal of Schottky Barrier Height Tuning Method with Interface Controlled Ni/Si stacked Silicidation Process

A novel method to effectively control the Schottky barrier height has been proposed with stacked silicidation process using Ni and Si stacked structures. Owing to little reaction of NiSi2 with Si channels, encroachments of Ni atoms into channels have been inhibited, so that the position of the interface between NiSi2 and Si has been controlled. Incorporation of P or B atoms at the interface has been found to effectively change the Schottky barrier heights for electrons (phi(Bn)) to 0.36 or 0.68 eV, respectively. Finally, ambipolar behaviors with silicided source/drain (S/D) FET have been successfully suppressed.